Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
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DAGC75H65M TO-247

Using DongHai's proprietary Trench design and advance FS technology, the 650V FS IGBT co-packed with SiC diode offers superior switching performances, high avalanche ruggedness and easy parallel operation
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  • DAGC75H65M

  • WXDH

75A 650V Trenchstop Insulated Gate Bipolar Transistor SiC Hybrid Discrete


1 Features 

Using DongHai's proprietary Trench design and advance FS technology, the 650V FS IGBT co-packed with SiC diode offers superior switching performances, high avalanche ruggedness and easy parallel operation


2 Features 

● FS Trench Technology, Positive temperature coefficient

● Low saturation voltage: VCE(sat), typ = 1.7V @ IC =75A and Tj = 25°C 

● Low switching losses due to the combination of FS technology and SiC technology 

● Extremely enhanced avalanche capability


3 Applications 

● Welding 

● UPS 

● Three-level Inverter

VCE Vcesat,Tj=25℃ Ic Tjmax Package
650V 1.7V 75A  175℃ TO-247


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