Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
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30A 650V Trenchstop Insulated Gate Bipolar Transistor DGN30F65M2 TO-3PN

Using DongHai's proprietary Trench design and advance FS technology, the 650V FS IGBT offers superior and switching performances, high avalanche ruggedness easy parallel operation
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  • DGN30F65M2

  • WXDH

30A 650V Trenchstop Insulated Gate Bipolar Transistor


1 Features 

Using DongHai's proprietary Trench design and advance FS technology, the 650V FS IGBT offers superior and switching performances, high avalanche ruggedness easy parallel operation 


2 Features 

● FS Trench Technology, Positive temperature coefficient

● Low saturation voltage: VCE(sat), typ = 1.9V @ IC =30A and Tj = 25°C 

● Extremely enhanced avalanche capability 


3 Applications 

● Welding

● UPS 

● Three-level Inverter

VcesPackageIc(Tj=100℃)
650VTO-3PN30A 


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