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100A 1700V Dimidium pontis IGBT moduli DGA100H170M2T 34mm

Hae portae Insulae Bipolar Transistor provectae fossae et technologiae Fieldstop consilio adhibitae sunt, praeclarum VCEsat et celeritate mutandi, portae humilis crimen. Quod congruit cum RoHS vexillum.
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50A 1200V Medium pontis moduli

1 Descriptio Haec Portae Insulae Bipolar Transistor provectae fossae et Fieldstop consilio technologiae usus est, si praecellens VCEsat et celeritate mutandi, portae humilis crimen. Quod congruit cum RoHS vexillum. 


2 Features 

FS Trench Technology, caliditas positiva coefficientis 

Saturatio humilis intentione: VCE(sat), typ = 2.25V @ IC = 100A et Tj = 25°C 

valde auctus facultatem NIVIS CASUS 


III Applications

Welding 

UPS 

Tres-gradu Inverter 

AC et DC servo coegi amplifier


Type VCE Ic VCEsat,Tj=25℃ Tjop sarcina
DGA100H170M2T 1700V 100A (Tj=100℃) 2.25V (Type) 175 34MM


download DGA100H170M2T-REV1.0.pdf

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