150A 1200V Half bridge module 34mm IGBT Module DGA150H120L2T

150A 1200V Half bridge module

1 Description 

These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS standard.

2 Features 

 Extremely enhanced avalanche capability 

 Recommended operating frequency（5kHz~20kHz） 

 FS Trench Technology,Positive temperature coefficient 

 Low saturation voltage: VCE(sat), typ = 1.8V@ IC =150A and Tj = 25°C

3 Applications 

• Welding 

• UPS 

• Three-leve Inverter 

  
  

  
  

  Type	VCE	Ic	VCEsat,Tj=25℃	Tjop	Package
  DGA150H120L2T	1200V	150A (Tj=100℃)	1.8V (Typ)	150℃	34MM