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| Quantity: | |
|---|---|
13003G5
WXDH
Epitaxial Silicon Transistor NPN
1 Description
These devices are designed for high − voltage, high − speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications
2 Features
High current output up to 1.0A
Low saturation voltage
High voltage
High reliability
3 Applications
Switching Regulators
Inverters
Motor Controls
Solenoid/Relay drivers and Deflection circuits
| BVCB | BVCE | VCESAT （Max) | IC |
| 700V | 480V | 0.6V | 1.0A |
Epitaxial Silicon Transistor NPN
1 Description
These devices are designed for high − voltage, high − speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications
2 Features
High current output up to 1.0A
Low saturation voltage
High voltage
High reliability
3 Applications
Switching Regulators
Inverters
Motor Controls
Solenoid/Relay drivers and Deflection circuits
| BVCB | BVCE | VCESAT （Max) | IC |
| 700V | 480V | 0.6V | 1.0A |
