Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
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75A 650V Half bridge module IGBT module DGA75H65M2T 34mm

These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS standard.
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  • DGA75H65M2T

  • WXDH

  • 34mm

  • DGA75H65M2T.pdf

  • 650V

  • 75A

75A 650V Half bridge module

1 Description 

These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS standard. 

2 Features 

● FS Trench Technology, Positive temperature coefficient 

● Low saturation voltage: VCE(sat), typ = 2.0V @ IC =75A and Tj = 25°C 

● Extremely enhanced avalanche capability 

3 Applications 

Welding 

UPS 

Three-leve Inverter 

AC and DC servo drive amplifier


Type VCE Ic VCEsat,Tj=25℃ Tjop Package
DGA75H65M2T 650V 75A (Tj=100℃) 1.7V (Typ) 175℃ 34MM


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