|
| Quantity: | |
|---|---|
DHB3N90
WXDH
TO-251
900V
3A
3A 900V N-channel Enhancement Mode Power MOSFET
1 Description
Description
These N-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard.
2 Features
● Fast switching
● Low on resistance(Rdson≤5.5Ω)
● Low gate charge(Typ: 16nC)
● Low reverse transfer capacitances(Typ: 6.5pF)
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Used in various power switching circuit for system miniaturization and higher efficiency.
● Power switch circuit of adaptor and charger.
| VDSS | RDS(on)(TYP) | ID |
| 900V | 4.7mΩ | 3A |
3A 900V N-channel Enhancement Mode Power MOSFET
1 Description
Description
These N-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard.
2 Features
● Fast switching
● Low on resistance(Rdson≤5.5Ω)
● Low gate charge(Typ: 16nC)
● Low reverse transfer capacitances(Typ: 6.5pF)
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Used in various power switching circuit for system miniaturization and higher efficiency.
● Power switch circuit of adaptor and charger.
| VDSS | RDS(on)(TYP) | ID |
| 900V | 4.7mΩ | 3A |
