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3a 900V N-Channel Enhancement Modus Power Mosfet Dhb3n90 ad CCLI

3A 900V N-Channel Enhancement Modus Power Mosfet
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3a 900v N-Channel Enhancement Modus Power Mosfet


I Description 


Descriptio 

Hi n-alveo amplificata Vdmosfets, est adeptus per se-aligned Planar technology quod reducere ad conduction damnum, amplio switching perficientur et augendae avalanche industria. Quae secundum Radii vexillum. 


II features

● Fast Switching 

● humilis in resistentia (rdson≤5.5Ω) 

● Minimum porta (Typ, 16nc) 

● Minimum Reverse Transfer Capitances (Typ: 6.5pf)

● C% unum pulsus Copyops Nectrix Energy Test 

● C% Δvds test


III Applications 

● usus est in variis virtute switching circuitu system miniaturization et altius efficientiam. 

● Power SWITCH CIRCUM ADAPTER et patina.

Vdss RDS (on) (Typ) Id
900V 4.7MΩ 3a


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