Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
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180A 100V N-channel Enhancement Mode Power MOSFET DHS035N10 TO-220

This N-channel enhancement mode power MOSFET utilizes advanced Split Gate Trench technology, which provides excellent Rdson and low Gate charge at the same time. Which accords with the RoHS standard.
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  • DHS035N10

  • WXDH

180A 100V N-channel Enhancement Mode Power MOSFET

1 Description 


This N-channel enhancement mode power MOSFET utilizes advanced Split Gate Trench technology, which provides excellent Rdson and low Gate charge at the same time. Which accords with the RoHS standard.


2 Features 

● Low on resistance 

● Low gate charge 

● Fast switching 

● Low reverse transfer capacitances

● 100% single pulse avalanche energy test

● 100% ΔVDS test 


3 Applications 

● Motor control and drive 

● Battery management 

● UPS (Uninterrupible Power Supplies)


VDSS RDS(on)(TYP) ID
100V 3.2mΩ 180A


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