(1)(8) (1)
porta
Jiangsu Donghai Semiconductor Co., Ltd
Hic es: Home » Products » MOSFET » 12V-300V N MOS » 180A 100V N-canali Enhancement Modus Potestatis MOSFET DHS035N10 TO-220

loading

Share to:
facebook sharing button
Twitter sharing button
linea participatio puga
wechat sharing button
sharingin button sharing
pinterest sharing button
whatsapp sharing button
sharethis sharing button

180A 100V N-canali Enhancement Modus Power MOSFET DHS035N10 TO-220

Hoc N-canale amplificationis modus potentia MOSFET provectae technologiae Spalatensis portae Trench utitur, quae Rdson et portam humilem simul praefectum praebet. Quod congruit cum RoHS vexillum.
Availability:
Quantity:
inquire Add to Basket

180A 100V N-canali Enhancement Modus Power MOSFET

1 Description 


Hoc N-canale amplificationis modus potentia MOSFET provectae technologiae Spalato portae Trench utitur, quae Rdson et portam humilem simul praefectum praebet. Quod congruit cum RoHS vexillum.


2 Features 

Minimum resistente 

Low porta crimen 

Fast commutatione 

Minimum vicissim translationis capacitates

C% unius pulsus NIVIS industria test

C% VDS test 


III Applications 

Motor imperium ac coegi 

Pugna procuratio 

UPS (Uninterrupible Power)


VDSS RDS(on)(TYP) ID
100V 3.2mΩ 180A


download Fabrica+DHS035N10&DHS035N10E+Specificationis+Rev.1.0 (1).pdf

Priora: 
Next: 
MOSFET
  • Jiangsu Donghai Semiconductor Co., Ltd
  • Sign up for our newsletter
  • expediret pro futuro
    signo pro nostris newsletter accipere updates recta in capsa tua
    Submit
Copyright © 2023Jiangsu Donghai Semiconductor Co., Ltd Technology by leadong.com