DHU3N90/DHD3N90

3A 900V N-channel Enhancement Mode Power MOSFET

1 Description

These N-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS

standard. 

2 Features

● Fast switching

● Low on resistance(Rdson≤5.5Ω)

● Low gate charge(Typ: 16nC)

● Low reverse transfer capacitances(Typ: 6.5pF)

● 100% single pulse avalanche energy test

● 100% ΔVDS test

3 Applications

 Used in various power switching circuit for system miniaturization and higher efficiency.

 Power switch circuit of electron ballast and adaptor.

VDSS	RDS(on)(TYP)	ID
900V	4.7Ω	3A