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DH012N03U
WXDH
TOLL
30V
235A
235A 30V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
2 Features
● Low on resistance
● Low gate charge
● Fast switching
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Power switching application
● Power management for inverter system
● Battery management
VDSS | RDS(on)(TYP) | ID |
30V | 1.15mΩ | 235A |
235A 30V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
2 Features
● Low on resistance
● Low gate charge
● Fast switching
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Power switching application
● Power management for inverter system
● Battery management
VDSS | RDS(on)(TYP) | ID |
30V | 1.15mΩ | 235A |