(1)(8) (1)
porta
Jiangsu Donghai Semiconductor Co., Ltd
Hic es: Home » Products » MOSFET » 12V-300V N MOS » 235A 30V N-channel Enhancement Modus Power MOSFET DH012N03U TOLLUS Package

loading

Share to:
facebook sharing button
Twitter sharing button
linea participatio puga
wechat sharing button
sharingin button sharing
pinterest sharing button
whatsapp sharing button
sharethis sharing button

235A 30V N-canali Enhancement Modus Power MOSFET DH012N03U TRIBUTUM Package

Hi N-channel amplificationis modus potentiae mosfets provectus usus est ad portam fossae fossae technologiae designatae, providit Rdson et portae minoris crimen. Quod congruit cum RoHS vexillum.
Availability:
Quantity:
inquire Add to Basket

235A 30V N-canale Enhancement Modus Power MOSFET


1 Description 

Hi N-channel amplificationis modus potentiae mosfets provectus usus est ad portam fossae fossae technologiae designatae, providit Rdson et portae minoris crimen. Quod congruit cum RoHS vexillum. 


2 Features

Minimum resistente 

Maximum crimen porta 

Fast commutatione 

Minimum vicissim translationis capacitates 

C% unius pulsus NIVIS industria test 

C% VDS test 


III Applications

Power switching application

procuratio potentia systematis invertendi

Pugna procuratio



VDSS RDS(on)(TYP) ID
30V 1.15mΩ 235A


Previous: 
Next: 
MOSFET
  • Jiangsu Donghai Semiconductor Co., Ltd
  • Sign up for our newsletter
  • expediret pro futuro
    signo pro nostris newsletter accipere updates recta in capsa tua
    Submit
Copyright © 2023Jiangsu Donghai Semiconductor Co., Ltd Technology by leadong.com