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DSU035N10N3A
WXDH
TOLL
100V
190A
100V/2.9mΩ/190A N-MOSFET
1 Description
The N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
2 Features
● AEC-Q101 qualified
• Low on resistance
• Low reverse transfer capacitances
• 100% single pulse avalanche energy test
• 100% ΔVDS test
• Pb-Free plating / Halogen-Free / RoHS compliant
3 Applications
● Power switching applications
• DC-DC converters
• Full bridge control
• Automotive applications
VDSS | RDS(on)(TYP) | ID |
100V | 2.9mΩ | 190A |
100V/2.9mΩ/190A N-MOSFET
1 Description
The N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
2 Features
● AEC-Q101 qualified
• Low on resistance
• Low reverse transfer capacitances
• 100% single pulse avalanche energy test
• 100% ΔVDS test
• Pb-Free plating / Halogen-Free / RoHS compliant
3 Applications
● Power switching applications
• DC-DC converters
• Full bridge control
• Automotive applications
VDSS | RDS(on)(TYP) | ID |
100V | 2.9mΩ | 190A |