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100V / 2.9MΩ / 190a N-Mosfet Dsu035n10n3a Toll

100V / 2.9Mω / 190a N-Channel Enhancement Modus Power Mosfet
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100V / 2.9MΩ / 190a N-Mosfet

I Description 


In N-Channel Enhancement Modus Power Mosfets Used Advanced Splite portam Fossam Technology Design, providit optimum RDSson et humilis porta arguere. Quae secundum Radii vexillum. 


II features 

● AEC-Q101 qualified 

• humilis in resistentia 

• humilis vicissim translationem capientances 

• C% una pulsus Copyops NIVIS CASUS Energy Test 

• C% Δvds test

• PB-libera plating / halogen-liberum / Rohs obsequium


III Applications 

● Power Switching Applications

• DC-DC Converters 

• Full pontem imperium

• Automotive Applications


Vdss RDS (on) (Typ) Id
100v 2.9Mω 190a


Download Donghai_dsu035n10n3a_datasheet_v1.0.pdf

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