 |
| Quantity: | |
|---|---|
DHS025N10U
WXDH
TOLL
100V
180A
N-channel Enhancement Mode Power MOSFET 180A 100V
1 Description
This N-channel enhancement mode power MOSFET utilizes advanced Split Gate Trench technology, which provides excellent Rdson and low Gate charge at the same time. Which accords with the RoHS standard.
2 Features
● Low on resistance
● Low gate charge
● Fast switching
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Power switching applications
● Power management for inverter systems
● Battery management
| VDSS | RDS(on)(TYP) | ID |
| 100V | 2.2mΩ | 180A |
N-channel Enhancement Mode Power MOSFET 180A 100V
1 Description
This N-channel enhancement mode power MOSFET utilizes advanced Split Gate Trench technology, which provides excellent Rdson and low Gate charge at the same time. Which accords with the RoHS standard.
2 Features
● Low on resistance
● Low gate charge
● Fast switching
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Power switching applications
● Power management for inverter systems
● Battery management
| VDSS | RDS(on)(TYP) | ID |
| 100V | 2.2mΩ | 180A |
