Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
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F7N80

These N-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. TO-220F provides insulation voltage rated at 2000V RMS from all three terminals to external heatsink. TO-220F series comply with UL standards.
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Description

These N-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. TO-220F provides insulation voltage rated at 2000V RMS from all three terminals to external heatsink. TO-220F series comply with UL standards.

Features

● Fast switching

● ESD improved capability

● Low on resistance(Rdson≤1.8Ω)

● Low gate charge(Typ: 33.9nC)

● Low reverse transfer capacitances(Typ: 11.2pF)

● 100% single pulse avalanche energy test

● 100% ΔVDS test

Applications

● Used in various power switching circuit for system miniaturization and higher efficiency.

● Power switch circuit of electron ballast and adaptor.


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