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150A 1200V Medium pontis moduli IGBT moduli moduli DGA150H120M2T 34mm

Hae portae Insulae Bipolar Transistor provectae fossae et technologiae Fieldstop consilio adhibitae sunt, praeclarum VCEsat et celeritate mutandi, portae humilis crimen. Quod congruit cum RoHS vexillum.
 
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  • DGA150H120M2T

  • WXDH

  • 34mm

  • DGA150H120M2T(1).pdf

  • 1200V

  • 150A

150A 1200V Medium pontis moduli


1 Description 

Hae portae Insulae Bipolar Transistor provectae fossae et technologiae Fieldstop consilio adhibitae sunt, praeclarum VCEsat et celeritate mutandi, portae humilis crimen. Quod congruit cum RoHS vexillum. 


2 Features 

  FS Trench Technology, caliditas positiva coefficientis 

  Saturatio humilis intentione: VCE(sat), typ = 1.9V @ IC = 100A et Tj = 25°C 

  valde auctus facultatem NIVIS CASUS 


III Applications 

  • Welding 

  • UPS 

  • Tres gradu Inverter 

  • AC et DC servo amplio coegi




    Type VCE Ic VCEsat,Tj=25℃ Tjop sarcina
    DGA150H120M2T 1200V 150A (Tj=100℃) 2.55V (Type) 150℃ 34MM
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150A 1200V IGBT OMNIBUS
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