 |
| Quantity: | |
|---|---|
DSE065N10L3A
WXDH
TO-263
100V
103A
100V/5.6mΩ/103A N-MOSFET
1 Description
This N-channel enhancement mode power MOSFET utilizes advanced Split Gate Trench technology, which provides excellent Rdson and low Gate charge at the same time. Which accords with the RoHS standard.
2 Features
• AEC-Q101 qualified
● Low on resistance
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test
● Pb-Free plating / Halogen-Free / RoHS compliant
3 Applications
• Motor Control and Drive
• Charge/Discharge for Battery Management System
• Synchronous Rectifier for SMPS
• Automotive Application
| VDSS | RDS(on)(TYP) | ID |
| 100V | 5.6mΩ | 103A |
100V/5.6mΩ/103A N-MOSFET
1 Description
This N-channel enhancement mode power MOSFET utilizes advanced Split Gate Trench technology, which provides excellent Rdson and low Gate charge at the same time. Which accords with the RoHS standard.
2 Features
• AEC-Q101 qualified
● Low on resistance
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test
● Pb-Free plating / Halogen-Free / RoHS compliant
3 Applications
• Motor Control and Drive
• Charge/Discharge for Battery Management System
• Synchronous Rectifier for SMPS
• Automotive Application
| VDSS | RDS(on)(TYP) | ID |
| 100V | 5.6mΩ | 103A |
