Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
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DSE065N10L3A TO-263

These N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
  • DSE065N10L3A

  • WXDH

100V/5.6mΩ/103A N-MOSFET

1 Description 

This N-channel enhancement mode power MOSFET utilizes advanced Split Gate Trench technology, which provides excellent Rdson and low Gate charge at the same time. Which accords with the RoHS standard. 

2 Features 

• AEC-Q101 qualified

● Low on resistance 

● Low reverse transfer capacitances

● 100% single pulse avalanche energy test 

● 100% ΔVDS test

● Pb-Free plating / Halogen-Free / RoHS compliant

3 Applications 

• Motor Control and Drive 

• Charge/Discharge for Battery Management System 

• Synchronous Rectifier for SMPS

• Automotive Application

100V 5.6mΩ 103A

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