Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
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8N65 TO-220C

These N-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. Which accords with the RoHS standard.
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Quantity:
  • 8N65

  • WXDH

7.5A 650V N-channel Enhancement Mode Power MOSFET


1 Description 

These N-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard.

2.Feature

● Fast switching 

● ESD improved capability 

● Low on resistance(Rdson≤1.4Ω)

● Low gate charge(Typ: 24nC) 

● Low reverse transfer capacitances(Typ: 5.5pF) 

● 100% single pulse avalanche energy test 

● 100% ΔVDS test 


3 Applications 

● Used in various power switching circuit for system miniaturization and higher efficiency. 

● Power switch circuit of electron ballast and adaptor.


VDSSRDS(on)(TYP)ID
650V1.2mΩ7.5A


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