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8n65 ad-220c

Hi n-alveo amplificata Vdmosfets, est adeptus per se-aligned Planar technology quod reducere ad conduction damnum, amplio switching
perficientur et augendae avalanche industria. Quae secundum Radii vexillum.
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  • 8n65

  • Wxdh

7.5a 650v N-Channel Enhancement Modus Power Mosfet


I Description 

Hi n-alveo amplificata Vdmosfets, est adeptus per se-aligned Planar technology quod reducere ad conduction damnum, amplio switching perficientur et augendae avalanche industria. Quae secundum Radii vexillum.

2.Feature

● Fast Switching 

● ESD improved facultatem 

● humilis in resistentia (rdson≤1.4Ω)

● Minimum porta (Typ, 24nc) 

● Minimum Reverse Transfer Capitances (Typ, 5.5pf) 

● C% unum pulsus Copyops Nectrix Energy Test 

● C% Δvds test 


III Applications 

● usus est in variis virtute switching circuitu system miniaturization et altius efficientiam. 

● Power SWITCH CIRCUPTURA electron SADIO et nibh.


Vdss RDS (on) (Typ) Id
650v 1.2MΩ 7.5a


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