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DSP037N08N3
WXDH
DFN5*6-8
80V
100A
80V/3.4mΩ/100A N-MOSFET
1 Description
These N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
2 Features
● Low on resistance
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test
Pb-free plating/Halogen-Free/RoHs compliant
3 Applications
● Power switching application
● DC-DC Converters
● Full bridge control
VDSS | RDS(on)(TYP) | ID |
80V | 3.4mΩ | 100A |
80V/3.4mΩ/100A N-MOSFET
1 Description
These N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
2 Features
● Low on resistance
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test
Pb-free plating/Halogen-Free/RoHs compliant
3 Applications
● Power switching application
● DC-DC Converters
● Full bridge control
VDSS | RDS(on)(TYP) | ID |
80V | 3.4mΩ | 100A |