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12A 600V N-channel Enhancement Mode Power MOSFET
1 Description
These silicon N-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce the
conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard.
2 Features
● Fast Switching
● Low ON Resistance(Rdson≤0.75Ω)
● Low Gate Charge(Typ: 40nC)
● Low Reverse Transfer Capacitances(Typ: 10pF)
● 100% Single Pulse Avalanche Energy Test
● 100% ΔVDS Test
3 Applications
● Used in various power switching circuit for system miniaturization and higher efficiency.
● Power switch circuit of adaptor and charger.
| VDSS | RDS(on)(TYP) | ID |
| 600V | 0.57Ω | 12A |
12A 600V N-channel Enhancement Mode Power MOSFET
1 Description
These silicon N-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce the
conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard.
2 Features
● Fast Switching
● Low ON Resistance(Rdson≤0.75Ω)
● Low Gate Charge(Typ: 40nC)
● Low Reverse Transfer Capacitances(Typ: 10pF)
● 100% Single Pulse Avalanche Energy Test
● 100% ΔVDS Test
3 Applications
● Used in various power switching circuit for system miniaturization and higher efficiency.
● Power switch circuit of adaptor and charger.
| VDSS | RDS(on)(TYP) | ID |
| 600V | 0.57Ω | 12A |
