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Jiangsu Donghai Semiconductor Co., Ltd
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ຜະລິດຕະພັນທັງຫມົດ

ຮູບພາບ ແບບ ຊຸດຕົວ V A ສານ ລາຍລະອຽດເອກະ ສອບຖາມ ເພີ່ມໃສ່ກະຕ່າ
25A 650V SiC Schottky Barrier Diode DCET20D65G3 TO-263-2 DCET20D65G3
N-channel Enhancement Mode Power MOSFET 10A 600V 10N60 10N60
5A 500V N-channel Enhancement Mode Power MOSFET 5N50 5N50
180A 60V N-channel Enhancement Mode Power MOSFET DHS015N06 TO-220C DHS015N06 TO-220C 60V 180A Donghai+DHS015N06&DHS015N06E+datasheet+Rev.1.0.pdf
16A 650V N-channel Super Junction Power MOSFET DHSJ21N65Z PDFN4(8*8) DHSJ21N65Z PDFN4(8*8) 650V 16 ກ ເອກະສານຂໍ້ມູນ Donghai DHSJ21N65Z V1.0(1).pdf
N-channel Enhancement Mode Power MOSFET 13A 500V E13N50 TO-263 E13N50 TO-263 500V 13 ກ 英文版E13N50技术规格书.pdf
N-channel Enhancement Mode Power MOSFET 7A 700V B7N70 TO-251B B7N70 TO-251B 700V 7A 英文版B7N70技术规格书.pdf
10.6A 650V N-channel Super Junction Power MOSFET DJF380N65T TO-220F DJF380N65T TO-220F 650V 10.6A ຂໍ້ມູນຈໍາເພາະຂອງອຸປະກອນ DJF380N65T Rev.1.0.pdf
80A 1200V Fast recovery diode MUR80120 TO-247-2L MUR80120 TO-247-2L 1200V 80A 英文版MUR80120技术规格书.pdf
-140A -60V P-channel Enhancement Mode Power MOSFET DTG050P06LA TO-220C DTG050P06LA TO-220C -60V -140A ອຸປະກອນ+DTG050P06LA+Specification+Rev.1.0.pdf
ໄດໂອດການຟື້ນຕົວໄວ 80A 200V MUR80FU20NCA TO-3PN MUR80FU20NCA TO-3PN 200V 80A 英文版MUR80FU20NCA技术规格书.pdf
8A 650V N-channel Enhancement Mode Power MOSFET F8N65 TO-220F F8N65 TO-220F 650V 8A F8N65技术规格书.pdf
180A 100V N-channel Enhancement Mode Power MOSFET DSE026N10NA TO-263 DSE026N10NA TO-263 100V 180A ອຸປະກອນ+DSE026N10NA&DSG028N10NA+Specification+Rev.1.0.pdf
100A 1200V Half bridge IGBT module DGA100H120M2T 34mm DGA100H120M2T 34ມມ 1200V 100A DGA100H120M2T.pdf
N-channel Enhancement Mode Power MOSFET 180A 60V DHS015N06E TO-263 DHS015N06E TO-263 60V 180A Donghai+DHS015N06&DHS015N06E+datasheet+Rev.1.0.pdf
50A 200V N-channel Enhancement Mode Power MOSFET F50N20 F50N20 TO-220F 200V 50A ຂໍ້ມູນຈໍາເພາະຂອງອຸປະກອນ F50N20(1).pdf
150A 1200V ໂມດູນຂົວເຄິ່ງ IGBT DGA150H120M2T 34mm DGA150H120L2T 34ມມ 1200V 150A DGA150H120L2T.pdf
4A 650V SiC Schottky Barrier Diode DCD04D65G4 TO-252B 650V 4A ອຸປະກອນ DCD04D65G4 Specification.pdf
150A 1200V ໂມດູນຂົວເຄິ່ງ IGBT DGA150H120M2T 34mm DGA150H120M2T 34ມມ 1200V 150A DGA150H120M2T(1).pdf
6A 650V Trenchstop Insulated Gate Transistor Bipolar DGD06F65M2 TO-252B DGD06F65M2 TO-252B 650V 6A _datasheet.pdf

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