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| Quantity: | |
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DSG019N04L
WXDH
40V/1.6mΩ/180A N-MOSFET
1 Description
These N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
2 Features
● Extremely low on-resistance RDS(on)
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test
Pb-free plating/Halogen-Free/ RoHS compliant
3 Applications
● Motor control and drive
● Charge/Discharge for Battery Management System
● Synchronous Rectifier for SMPS
| VDSS | RDS(on)(TYP) | ID |
| 40V | 1.6mΩ | 180A |
40V/1.6mΩ/180A N-MOSFET
1 Description
These N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
2 Features
● Extremely low on-resistance RDS(on)
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test
Pb-free plating/Halogen-Free/ RoHS compliant
3 Applications
● Motor control and drive
● Charge/Discharge for Battery Management System
● Synchronous Rectifier for SMPS
| VDSS | RDS(on)(TYP) | ID |
| 40V | 1.6mΩ | 180A |
