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Jiangsu Donghai Semiconductor Co., Ltd
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DHS025N06B / DHS025N06D

These N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
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  • DHS025N06B/DHS025N06D

  • WXDH

120A 60V N-channel Enhancement Mode Power MOSFET


1 Description 

The N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. 


2 Features 

● Fast switching 

● Low on resistance 

● Low gate charge 

● Low reverse transfer capacitances 

● 100% single pulse avalanche energy test 

● 100% ΔVDS test 


3 Applications 

● Power switching applications

● DC-DC converters 

● Full bridge control



VDSS RDS(on)(TYP) ID
60V 2.3mΩ 120A


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