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| Quantity: | |
|---|---|
DHS025N06B/DHS025N06D
WXDH
120A 60V N-channel Enhancement Mode Power MOSFET
1 Description
The N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
2 Features
● Fast switching
● Low on resistance
● Low gate charge
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Power switching applications
● DC-DC converters
● Full bridge control
| VDSS | RDS(on)(TYP) | ID |
| 60V | 2.3mΩ | 120A |
120A 60V N-channel Enhancement Mode Power MOSFET
1 Description
The N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
2 Features
● Fast switching
● Low on resistance
● Low gate charge
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Power switching applications
● DC-DC converters
● Full bridge control
| VDSS | RDS(on)(TYP) | ID |
| 60V | 2.3mΩ | 120A |
