8N65/F8N65

8A 650V N-channel Enhancement Mode Power MOSFET

1 Description

These silicon N-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce the

conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard.

2 Features

● Fast switching

● ESD improved capability

● Low on resistance(Rdson≤1.4Ω)

● Low gate charge(Typ: 24nC)

● Low reverse transfer capacitances(Typ: 5.5pF)

● 100% single pulse avalanche energy test

● 100% ΔVDS test

3 Applications

● Used in various power switching circuit for system miniaturization and higher efficiency.

● Power switch circuit of adaptor and charger.

VDSS	RDS(on)(TYP)	ID
650V	1.2Ω	8A