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8A 500V N-channel Enhancement Mode Power MOSFET
1 Description
These, the silicon N-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce
the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the
RoHS standard.
2 Features
● Fast switching
● Low on resistance(Rdson≤0.9Ω)
● Low gate charge(Typ: 24nC)
● Low reverse transfer capacitances(Typ: 7pF)
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Used in various power switching circuit for system miniaturization and higher efficiency.
● Power switch circuit of adaptor and charger.
| VDSS | RDS(on)(TYP) | ID |
| 500V | 0.7Ω | 8A |
8A 500V N-channel Enhancement Mode Power MOSFET
1 Description
These, the silicon N-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce
the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the
RoHS standard.
2 Features
● Fast switching
● Low on resistance(Rdson≤0.9Ω)
● Low gate charge(Typ: 24nC)
● Low reverse transfer capacitances(Typ: 7pF)
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Used in various power switching circuit for system miniaturization and higher efficiency.
● Power switch circuit of adaptor and charger.
| VDSS | RDS(on)(TYP) | ID |
| 500V | 0.7Ω | 8A |
