Availability | |
---|---|
: | |
8a 500v N-Channel Enhancement Modus Power Mosfet
I Description
Hi, Silicon N-Channel Enhanced VDMOSFETS, est adeptus per se-aligned Planar technology quod reducere
Et conduction damnum, amplio switching perficientur et augendae avalanche navitas. Quae secundum
Radius vexillum.
II features
● Fast Switching
● humilis in resistentia (rdson≤0.9Ω)
● Minimum porta (Typ, 24nc)
● Low Reverse Transfer Capitances (Typ: 7PF)
● C% unum pulsus Copyops Nectrix Energy Test
● C% Δvds test
III Applications
● usus est in variis virtute switching circuitu system miniaturization et altius efficientiam.
● Power SWITCH CIRCUM ADAPTER et patina.
Vdss | RDS (on) (Typ) | Id |
500V | 0.7Ω | 8a |
8a 500v N-Channel Enhancement Modus Power Mosfet
I Description
Hi, Silicon N-Channel Enhanced VDMOSFETS, est adeptus per se-aligned Planar technology quod reducere
Et conduction damnum, amplio switching perficientur et augendae avalanche navitas. Quae secundum
Radius vexillum.
II features
● Fast Switching
● humilis in resistentia (rdson≤0.9Ω)
● Minimum porta (Typ, 24nc)
● Low Reverse Transfer Capitances (Typ: 7PF)
● C% unum pulsus Copyops Nectrix Energy Test
● C% Δvds test
III Applications
● usus est in variis virtute switching circuitu system miniaturization et altius efficientiam.
● Power SWITCH CIRCUM ADAPTER et patina.
Vdss | RDS (on) (Typ) | Id |
500V | 0.7Ω | 8a |