Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
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2N60/F2N60/I2N60/ E2N60/B2N60/D2N60

2A 600V N-channel Enhancement Mode Power MOSFET

2A 600V N-channel Enhancement Mode Power MOSFET

1 Description

These silicon N-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce the

conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard.

2 Features

● Fast switching

● Low on resistance(Rdson≤4.5Ω)

● Low gate charge(Typ: 8.5nC)

● Low reverse transfer capacitances(Typ: 3.8pF)

● 100% single pulse avalanche energy test

● 100% ΔVDS test

3 Applications

● Used in various power switching circuit for system miniaturization and higher efficiency.

● Power switch circuit of adaptor and charger.

600V 4.0Ω 2A


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