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200V/11mΩ/110A N-MOSFET DSE108N20NA TO-263

These N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
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200V/11mΩ/110A N-MOSFET


1 Description 

These N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. 


2 Features

● AEC-Q101 qualified

● Low on resistance

● Low reverse transfer capacitances

● 100% single pulse avalanche energy test 

● 100% ΔVDS test 

• Pb-Free plating / Halogen-Free / RoHS compliant


3 Applications 

● Power switching applications  

● DC-DC converters

● Full bridge control




VDSS RDS(on)(TYP) ID
200V 11mΩ 110A


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