180A 135V N-channel Enhancement Mode Power MOSFET DSE043N14N TO-263

180A 135V N-channel Enhancement Mode Power MOSFET

1 Description 

This N-channel enhancement mode power MOSFET utilizes advanced Split Gate Trench technology, which provides excellent Rdson and low Gate charge at the same time. Which accords with the RoHS standard. 

2 Features

● Low on resistance 

● Low gate charge 

● Fast switching

● Low reverse transfer capacitances 

● 100% single pulse avalanche energy test

● 100% ΔVDS test 

3 Applications 

● Motor control and drive 

● Battery management 

● UPS (Uninterrupible Power Supplies)

VDSS	RDS(on)(TYP)	ID
135V	3.7mΩ	180A