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DH100N06
WXDH
TO-220C
68V
112A
112A 68V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
2 Features
● Low on resistance
● Low gate charge
● Fast switching
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Power switching applications
● DC-DC converters
● Full bridge control
VBR | RDS(on) (TYP) | ID |
68V | 6.5mΩ | 112A |
112A 68V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
2 Features
● Low on resistance
● Low gate charge
● Fast switching
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Power switching applications
● DC-DC converters
● Full bridge control
VBR | RDS(on) (TYP) | ID |
68V | 6.5mΩ | 112A |