未命名(1)(8) (1)
gate
Jiangsu Donghai Semiconductor Co., Ltd
You are here: Home » Products » MOSFET » 12V-300V N MOS » 112A 68V N-channel Enhancement Mode Power MOSFET DH100N06 TO-220C

loading

Share to:
facebook sharing button
twitter sharing button
line sharing button
wechat sharing button
linkedin sharing button
pinterest sharing button
whatsapp sharing button
sharethis sharing button

112A 68V N-channel Enhancement Mode Power MOSFET DH100N06 TO-220C

These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
Availability:
Quantity:
Inquire Add to Basket

112A 68V N-channel Enhancement Mode Power MOSFET


1 Description

These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.


2 Features 

● Low on resistance 

● Low gate charge 

● Fast switching 

● Low reverse transfer capacitances

● 100% single pulse avalanche energy test 

● 100% ΔVDS test 


3 Applications

● Power switching applications 

● DC-DC converters 

● Full bridge control

VBR RDS(on) (TYP) ID
68V 6.5mΩ 112A



Previous: 
Next: 
MOSFET
  • Jiangsu Donghai Semiconductor Co., Ltd
  • Sign up for our newsletter
  • get ready for the future
    sign up for our newsletter to get updates straight to your inbox
    Submit
Copyright © 2023​​​​​​​ Jiangsu Donghai Semiconductor Co., Ltd   Technology by leadong.com