porta
Jiangsu Donghai Semiconductor Co., Ltd
Hic es: Home » Products » MOSFET » 12V-300V N MOS » 112A 68V N-canali Enhancement Modus Potestatis MOSFET DH100N06 TO-220C

loading

Share to:
facebook sharing button
Twitter sharing button
linea participatio puga
wechat sharing button
sharingin button sharing
pinterest sharing button
whatsapp sharing button
sharethis sharing button

112A 68v N-canale Enhancement Modus Power MOSFET DH100N06 TO-220C

Hi N-channel amplificationis modus potentiae mosfets adhibuit progressum fossae consilio technologiae, dum Rdson optimam et humilem portam praefecit. Quod congruit cum RoHS vexillum.
Availability:
Quantity:

112A 68v N-canale Enhancement Modus Power MOSFET


1 Description

Hi N-channel amplificationis modus potentiae mosfets usus provectae fossae consilio technologiae, si optimam Rdson et humilem portam praefecit. Quod congruit cum RoHS vexillum.


2 Features 

Minimum resistente 

Low porta crimen 

Fast commutatione 

Minimum vicissim translationis capacitates

C% unius pulsus NIVIS industria test 

C% VDS test 


III Applications

Power switching applications 

DC-DC converters 

Ponte plena potestate

VBR RDS(on) (TYP) ID
68V 6.5mΩ 112A



Priora: 
Next: 
  • Sign up for our newsletter
  • expediret pro futuro
    signo pro nostris newsletter accipere updates recta in capsa tua