注: 建议图片大小150px*50px 
 |
| Quantity: | |
|---|---|
5N65C/F5N65C/I5N65C /E5N65C/B5N65C/D5N65C
WXDH
4.5A 650V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard.
2 Features
● Fast Switching
● ESD Improved Capability
● Low ON Resistance(Rdson≤2.8Ω)
● Low Gate Charge(Typical Data:14.5nC)
● Low Reverse Transfer Capacitances(Typical:3.5pF)
● 100% Single Pulse Avalanche Energy Test
● 100% ΔVDS Test
3 Applications
● used in various power switching circuit for system miniaturization and higher efficiency.
● Power switch circuit of electron ballast and adaptor.
| VDSS | RDS(on)(TYP) | ID |
| 650V | 2.4Ω | 4.5A |
4.5A 650V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard.
2 Features
● Fast Switching
● ESD Improved Capability
● Low ON Resistance(Rdson≤2.8Ω)
● Low Gate Charge(Typical Data:14.5nC)
● Low Reverse Transfer Capacitances(Typical:3.5pF)
● 100% Single Pulse Avalanche Energy Test
● 100% ΔVDS Test
3 Applications
● used in various power switching circuit for system miniaturization and higher efficiency.
● Power switch circuit of electron ballast and adaptor.
| VDSS | RDS(on)(TYP) | ID |
| 650V | 2.4Ω | 4.5A |
