: 150px*50px 
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| Quantity: | |
|---|---|
5N65C/F5N65C/I5N65C /E5N65C/B5N65C/D5N65C
WXDH
4.5A 650V N-canale Enhancement Modus Power MOSFET
1 Description
Haec N-canali Consectetur VDMOSFETs, technologiae planae auto-aligned, quae damnum conductionis minuit, emendare mutandi effectum et augere NIVIS industriam.Quod congruit cum RoHS vexillum.
2 Features
Fast Switching
ESD Improved Capability
Minimum DE Resistentia (Rdson≤2.8Ω)
● Porta Low præcipe (Typical Data: 14.5nC)
Low Reverse Transfer Capacitances (Typical: 3.5pF)
C% Singulus Pulsus NIVIS Energy Test
C% VDS Test
III Applications
● in variis potentiae mutandi circuitionibus ad systematis miniaturizationem et efficientiam altiorem adhibita.
● Potestas transiens ambitum electronico adprehensis et adaptor.
| VDSS | RDS(on)(TYP) | ID |
| 650V | 2.4Ω | 4.5A |
4.5A 650V N-canale Enhancement Modus Power MOSFET
1 Description
Haec N-canali Consectetur VDMOSFETs, technologiae planae auto-aligned, quae damnum conductionis minuit, emendare mutandi effectum et augere NIVIS industriam.Quod congruit cum RoHS vexillum.
2 Features
Fast Switching
ESD Improved Capability
Minimum DE Resistentia (Rdson≤2.8Ω)
● Porta Low præcipe (Typical Data: 14.5nC)
Low Reverse Transfer Capacitances (Typical: 3.5pF)
C% Singulus Pulsus NIVIS Energy Test
C% VDS Test
III Applications
● in variis potentiae mutandi circuitionibus ad systematis miniaturizationem et efficientiam altiorem adhibita.
● Potestas transiens ambitum electronico adprehensis et adaptor.
| VDSS | RDS(on)(TYP) | ID |
| 650V | 2.4Ω | 4.5A |
