N-Channel Enhancement Modus Power Mosfet 4a 1500V Dh4n150B ad-CCXLVII

N-Channel Enhancement Modus Power Mosfet 4A 1500V

I Description

Dh4n150, Silicon N-Channel Enhanced Vdmosfets, est adeptus per se-aligned Planar technology quod reducere conduction damnum, amplio switching perficientur et augendae avalanche navitas. Et non potest esse in varie Switching Circuit System Miniaturization et altius efficientiam. In sarcina forma est ad-3pf, quae secundum Radii vexillum. 

II features 

 Fast Switching 

 humilis in resistentia (rdson≤6.5Ω) 

 Minimum portam crimen (typical data: 38nc)

 Minimum Reverse Transfer Capitances (Typical: 2.9pf) 

 C% una pulsus Copyops NIVIS CASUS Energy Test 

III Applications 

 Power SWITCH CIRCUS ADAPTER et patina.