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Hic es: Home » Products » MOSFET » 12V-300V N MOS » 100A 40V N-canali Enhancement Modus Potestatis MOSFET DHS021N04P DFN5X6

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100A 40V N-canale Enhancement Modus Power MOSFET DHS021N04P DFN5X6

Hi N-channel amplificationis modus potentiae mosfets provectus usus est ad portam fossae fossae technologiae designatae, providit Rdson et portae minoris crimen. Quod congruit cum RoHS vexillum.
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100A 40V N-canale Enhancement Modus Power MOSFET


1 Description 


Hi N-channel amplificationis modus potentiae mosfets provectus usus est ad portam fossae fossae technologiae designatae, providit Rdson et portae minoris crimen. Quod congruit cum RoHS vexillum. 


2 Features

Minimum resistente 

Low porta crimen 

Fast commutatione 

Minimum vicissim translationis capacitates 

C% una pulsus NIVIS industria test

C% VDS test


III Applications 

Synchroni rectificationem in SMPS 

Ferreus commutatione ac celeritas in circuitu

Power instrumenta

UPS 

Motor control




VDSS  RDS(on) (TYP) ID
40V 1.4mΩ 100A


download Fabrica DHS021N04 Specification Rev.2.0.pdf

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NPN Epitaxial Silicon Transistor
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