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| Quantity: | |
|---|---|
DSU047N15NA
WXDH
150V/4.1mΩ/175A N-MOSFET
1 Description
These N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
2 Features
• AEC-Q101 qualified
• Extremely low on-resistance RDS(on)
• Low reverse transfer capacitances
• 100% single pulse avalanche energy test
• 100% ΔVDS test
• Pb-Free plating / Halogen-Free / RoHS compliant
3 Applications
• Motor Control and Drive
• Charge/Discharge for Battery Management System
• Synchronous Rectifier for SMPS
| VDSS | RDS(on)(TYP) | ID |
| 150V | 4.1mΩ | 175A |
150V/4.1mΩ/175A N-MOSFET
1 Description
These N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
2 Features
• AEC-Q101 qualified
• Extremely low on-resistance RDS(on)
• Low reverse transfer capacitances
• 100% single pulse avalanche energy test
• 100% ΔVDS test
• Pb-Free plating / Halogen-Free / RoHS compliant
3 Applications
• Motor Control and Drive
• Charge/Discharge for Battery Management System
• Synchronous Rectifier for SMPS
| VDSS | RDS(on)(TYP) | ID |
| 150V | 4.1mΩ | 175A |
