Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
You are here: Home » Products » MOSFET » 12V-300V N MOS » DSU024N10N3A TOLL Package

loading

Share to:
facebook sharing button
twitter sharing button
line sharing button
wechat sharing button
linkedin sharing button
pinterest sharing button
whatsapp sharing button
sharethis sharing button

DSU024N10N3A TOLL Package

These N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
Availability:
Quantity:
  • DSU024N10N3A

  • WXDH

100V/1.8mΩ/272A N-MOSFET


1 Description 

This N-channel enhancement mode power MOSFET utilizes advanced Split Gate Trench technology, which provides excellent Rdson and low Gate charge at the same time. Which accords with the RoHS standard. 


2 Features

  • AEC-Q101 qualified

● Low on resistance 

● Low reverse transfer capacitances 

● 100% single pulse avalanche energy test

● 100% ΔVDS test 

  • Pb-free plating/Halogen-free/RoHs compliant

3 Applications 

● Power switching applications

● DC-DC converters

● Full bridge control

  • Automotive applications


VDSSRDS(on)(TYP)ID
100V1.8 mΩ272A


Previous: 
Next: 

Product Category

Latest News

  • Jiangsu Donghai Semiconductor Co., Ltd
  • Sign up for our newsletter
  • get ready for the future
    sign up for our newsletter to get updates straight to your inbox