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DSU024N10N3A
WXDH
100V/1.8mΩ/272A N-MOSFET
1 Description
This N-channel enhancement mode power MOSFET utilizes advanced Split Gate Trench technology, which provides excellent Rdson and low Gate charge at the same time. Which accords with the RoHS standard.
2 Features
AEC-Q101 qualified
● Low on resistance
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test
Pb-free plating/Halogen-free/RoHs compliant
3 Applications
● Power switching applications
● DC-DC converters
● Full bridge control
Automotive applications
| VDSS | RDS(on)(TYP) | ID |
| 100V | 1.8 mΩ | 272A |
100V/1.8mΩ/272A N-MOSFET
1 Description
This N-channel enhancement mode power MOSFET utilizes advanced Split Gate Trench technology, which provides excellent Rdson and low Gate charge at the same time. Which accords with the RoHS standard.
2 Features
AEC-Q101 qualified
● Low on resistance
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test
Pb-free plating/Halogen-free/RoHs compliant
3 Applications
● Power switching applications
● DC-DC converters
● Full bridge control
Automotive applications
| VDSS | RDS(on)(TYP) | ID |
| 100V | 1.8 mΩ | 272A |
