Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
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DSU024N10N3A TOLL Package

These N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
  • DSU024N10N3A

  • WXDH

100V/1.8mΩ/272A N-MOSFET

1 Description 

This N-channel enhancement mode power MOSFET utilizes advanced Split Gate Trench technology, which provides excellent Rdson and low Gate charge at the same time. Which accords with the RoHS standard. 

2 Features

  • AEC-Q101 qualified

● Low on resistance 

● Low reverse transfer capacitances 

● 100% single pulse avalanche energy test

● 100% ΔVDS test 

  • Pb-free plating/Halogen-free/RoHs compliant

3 Applications 

● Power switching applications

● DC-DC converters

● Full bridge control

  • Automotive applications

100V 1.8 mΩ 272A

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