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| Quantity: | |
|---|---|
DSG150N10L3
WXDH
100V/12.5mΩ/60A N-MOSFET
1 Description
The N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
2 Features
● Low on resistance
● Pb-Free plating / Halogen-Free / RoHS compliant
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Motor control and drive
● Charge/Discharge for Battery Management System
● Synchronous Rectifier for SMPS
| VDSS | RDS(on)(TYP) | ID |
| 100V | 12.5mΩ | 60A |
100V/12.5mΩ/60A N-MOSFET
1 Description
The N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
2 Features
● Low on resistance
● Pb-Free plating / Halogen-Free / RoHS compliant
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Motor control and drive
● Charge/Discharge for Battery Management System
● Synchronous Rectifier for SMPS
| VDSS | RDS(on)(TYP) | ID |
| 100V | 12.5mΩ | 60A |
