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DSG150N10L3 TO-220

These N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
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  • DSG150N10L3

  • WXDH

100V/12.5mΩ/60A N-MOSFET


1 Description 

The N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. 


2 Features 

● Low on resistance 

● Pb-Free plating / Halogen-Free / RoHS compliant

● Low reverse transfer capacitances 

● 100% single pulse avalanche energy test 

● 100% ΔVDS test 


3 Applications 

● Motor control and drive 

● Charge/Discharge for Battery Management System

● Synchronous Rectifier for SMPS


VDSS RDS(on)(TYP) ID
100V 12.5mΩ 60A


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