Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
You are here: Home » Products » MOSFET » 12V-300V N MOS » DSG150N10L3 TO-220

loading

Share to:
facebook sharing button
twitter sharing button
line sharing button
wechat sharing button
linkedin sharing button
pinterest sharing button
whatsapp sharing button
sharethis sharing button

DSG150N10L3 TO-220

These N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
Availability:
Quantity:
  • DSG150N10L3

  • WXDH

100V/12.5mΩ/60A N-MOSFET


1 Description 

The N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. 


2 Features 

● Low on resistance 

● Pb-Free plating / Halogen-Free / RoHS compliant

● Low reverse transfer capacitances 

● 100% single pulse avalanche energy test 

● 100% ΔVDS test 


3 Applications 

● Motor control and drive 

● Charge/Discharge for Battery Management System

● Synchronous Rectifier for SMPS


VDSSRDS(on)(TYP)ID
100V12.5mΩ60A


Previous: 
Next: 

Product Category

Latest News

  • Jiangsu Donghai Semiconductor Co., Ltd
  • Sign up for our newsletter
  • get ready for the future
    sign up for our newsletter to get updates straight to your inbox