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DSG150N10L3
Wxdh
100V / 12.5MΩ / 60a N-Mosfet
I Description
In N-Channel Enhancement Modus Power Mosfets Used Advanced Splite portam Fossam Technology Design, providit optimum RDSson et humilis porta arguere. Quae secundum Radii vexillum.
II features
● humilis in resistentia
● PB-libera plating / halogen-liberum / Rohs obsequium
● humilis vicissim translationem capientances
● C% unum pulsus Copyops Nectrix Energy Test
● C% Δvds test
III Applications
● motricium imperium et coegi
● crimen / missionem in altilium administratione ratio
● Synchronae rectifier ad SMPS
Vdss | RDS (on) (Typ) | Id |
100v | 12.5Mω | 60a |
100V / 12.5MΩ / 60a N-Mosfet
I Description
In N-Channel Enhancement Modus Power Mosfets Used Advanced Splite portam Fossam Technology Design, providit optimum RDSson et humilis porta arguere. Quae secundum Radii vexillum.
II features
● humilis in resistentia
● PB-libera plating / halogen-liberum / Rohs obsequium
● humilis vicissim translationem capientances
● C% unum pulsus Copyops Nectrix Energy Test
● C% Δvds test
III Applications
● motricium imperium et coegi
● crimen / missionem in altilium administratione ratio
● Synchronae rectifier ad SMPS
Vdss | RDS (on) (Typ) | Id |
100v | 12.5Mω | 60a |