porta
Jiangsu Donghai Semiconductor Co., Ltd
You are here: In domo » Productus » Mosfet » 12V-300v n Mos » Dsg150n10l3 ad CCXX

loading

Share est:
Facebook Sharing Button
Twitter Socius Button
Line sharing button
Weckat Sharing Button
LinkedIn Sharing Button
Pinterest Sharing Button
Whatsapp Sharing Button
Sharing Sharing Button

DSG150N10L3 ad CCXX

His n-channel enhancement modus potestate Mosfets solebat provectus splite porta fossa technology consilio, providit optimum rdson et humilis porta arguere. Quae secundum Radii vexillum.
Availability:
Quantitas:
  • DSG150N10L3

  • Wxdh

100V / 12.5MΩ / 60a N-Mosfet


I Description 

In N-Channel Enhancement Modus Power Mosfets Used Advanced Splite portam Fossam Technology Design, providit optimum RDSson et humilis porta arguere. Quae secundum Radii vexillum. 


II features 

● humilis in resistentia 

● PB-libera plating / halogen-liberum / Rohs obsequium

● humilis vicissim translationem capientances 

● C% unum pulsus Copyops Nectrix Energy Test 

● C% Δvds test 


III Applications 

● motricium imperium et coegi 

● crimen / missionem in altilium administratione ratio

● Synchronae rectifier ad SMPS


Vdss RDS (on) (Typ) Id
100v 12.5Mω 60a


Previous: 
Next: 
  • NEWSLETTER USUS
  • Signare ad Future
    Sign nostro Newsletter ad updates recta ad Inbuxo