Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
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DSE058N15NA TO-263

These N-channel enhancement mode power MOSFET utilizes advanced Split Gate Trench technology, which provides excellent Rdson and low Gate charge at the same time. Which accords with the RoHS standard.
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  • DSE058N15NA

  • WXDH

150A 150V N-channel Enhancement Mode Power MOSFET


1 Description 

These N-channel enhancement mode power MOSFET utilizes advanced Split Gate Trench technology, which provides excellent Rdson and low Gate charge at the same time. Which accords with the RoHS standard. 


2 Features 

● Low on resistance 

● Low gate charge 

● Fast switching

● Low reverse transfer capacitances 

● 100% single pulse avalanche energy test 

● 100% ΔVDS test 

● AEC-Q101 qualified 


3 Applications 

● Motor control and drive

● Battery management 

● UPS (Uninterrupible Power Supplies)


VDSSRDS(on)(TYP)ID
150V5.0mΩ150A


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