未命名(1)(8) (1)
gate
Jiangsu Donghai Semiconductor Co., Ltd
You are here: Home » Products » IGBT MODULE » PIM » 50A 1200V PIM in one-package IGBT Module DGC50C120M2T Econo PIM2

loading

Share to:
facebook sharing button
twitter sharing button
line sharing button
wechat sharing button
linkedin sharing button
pinterest sharing button
whatsapp sharing button
sharethis sharing button

50A 1200V PIM in one-package IGBT Module DGC50C120M2T Econo PIM2

These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS standard.
Availability:
Quantity:
Inquire Add to Basket

50A 1200V PIM in one-package

1 Description 

These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS standard. 


2 Features 

 Low gate charge 

 Excellent switching speed 

 Easy paralleling capability due to positive temperature Coefficient in VCEsat 

 Tsc≥10µs 

 Fast recovery full current anti-parallel diode 

 Low VCEsat 


3 Applications 

 Welding 

 UPS 

 Three-leve Inverter 

 AC and DC servo drive amplifier



  • Type VCE Ic VCEsat,Tj=25℃ Tjop Package
    DGC50C120M2T 1200V 50A (Tj=100℃) 1.85V (Typ) 150℃ Econo PIM2

Previous: 
Next: 
IGBT Module
  • Jiangsu Donghai Semiconductor Co., Ltd
  • Sign up for our newsletter
  • get ready for the future
    sign up for our newsletter to get updates straight to your inbox
    Submit
Copyright © 2023​​​​​​​ Jiangsu Donghai Semiconductor Co., Ltd   Technology by leadong.com