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Hic es: Home » Products » IGBT MODULE » PIM » 50A 1200V PIM in uno sarcina IGBT Module DGC50C120M2T Econo PIM2

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50A 1200V PIM in uno sarcina IGBT Module DGC50C120M2T Econo PIM2

Hae portae Insulae Bipolar Transistor provectae fossae et technologiae Fieldstop consilio adhibitae sunt, praeclarum VCEsat et celeritate mutandi, portae humilis crimen. Quod congruit cum RoHS vexillum.
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50A 1200V PIM in uno sarcina

1 Description 

Hae portae Insulae Bipolar Transistor provectae fossae et technologiae Fieldstop consilio adhibitae sunt, praeclarum VCEsat et celeritate mutandi, portae humilis crimen. Quod congruit cum RoHS vexillum. 


2 Features 

Low porta crimen 

Optima celeritate mutandi 

 Facilis parallingis capacitas ob temperamentum positivum coefficientis in VCEsat . 

Tsc≥10µs 

Fast recuperatio plena vena anti-parallel diode 

Minimum VCEsat 


III Applications 

Welding 

UPS 

Tres-gradu Inverter 

AC et DC servo coegi amplifier



  • Type VCE Ic VCEsat,Tj=25℃ Tjop sarcina
    DGC50C120M2T 1200V 50A (Tj=100℃) 1.85V (Type) 150℃ Econo PIM2

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