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40V/0.85mΩ/200A N-MOSFET DSE012N04NA TO-263 PACKAGE

These N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
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40V/0.85mΩ/200A N-MOSFET


1 Description 

These N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. 


2 Features

• AEC-Q101 qualified

● Low on resistance

● Low reverse transfer capacitances

● 100% single pulse avalanche energy test 

● 100% ΔVDS test 

Pb-free plating/Halogen-Free/ RoHS compliant


3 Applications 

• Motor Control and Drive

• Charge/Discharge for Battery Management System 

• Synchronous Rectifier for SMPS 

• Automotive application


VDSS RDS(on)(TYP) ID
40V 0.85mΩ 200A


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