35A 120V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel enhancement mode power mosfets used advanced Splite gate technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
2 Features
● Fast switching
● Low on resistance
● Low gate charge
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Power switching applications
● DC-DC converters
● Power tools
● UPS
● Motor control
VDSS |
RDS(on)(TYP) |
ID |
120V |
23mΩ |
35A |