Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
You are here: Home » Products » MOSFET » 400V-1500V N MOS » 20N60/F20N60/20N60D

loading

Share to:
facebook sharing button
twitter sharing button
line sharing button
wechat sharing button
linkedin sharing button
pinterest sharing button
whatsapp sharing button
sharethis sharing button

20N60/F20N60/20N60D

20A 600V N-channel Enhancement Mode Power MOSFET
Availability:
Quantity:

20A 600V N-channel Enhancement Mode Power MOSFET

1 Description

These silicon N-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce the

conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard.

2 Features

● Fast switching

● Low on resistance(Rdson≤0.45Ω)

● Low gate charge(Typ: 61nC)

● Low reverse transfer capacitances(Typ: 20pF)

● 100% single pulse avalanche energy test

● 100% ΔVDS test

3 Applications

● Used in various power switching circuit for system miniaturization and higher efficiency.

● Power switch circuit of adaptor and charger.


VDSS RDS(on)(TYP) ID
600V 0.36Ω 20A


Previous: 
Next: 
  • Sign up for our newsletter
  • get ready for the future
    sign up for our newsletter to get updates straight to your inbox