 |
| Quantity: | |
|---|---|
20N65
WXDH
TO-220C
650V
20A
20A 650V N-channel Enhancement Mode Power MOSFET
1 Description
These silicon N-channel Enhanced VDMOSFETs are obtained by the self-aligned planar Technology which reduce the conduction loss,improve switching performance and enhance the avalanche energy.The package form is TO-220F. Which accords with the RoHS standard.
2 Features
● Fast Switching
● Low On Resistance(Rdson≤0.5Ω)
● Low Gate Charge(Typ: 65nC)
● Low Reverse Transfer Capacitances(Typ: 20pF)
● 100% Single Pulse Avalanche Energy Test
● 100% ΔVDS Test
3 Application
● Used in various power switching circuit for system miniaturization and higher efficiency.
● Power switch circuit of adaptor and charger
| VDSS | RDS(on)（TYP) | ID |
| 650V | 0.37Ω | 20A |
20A 650V N-channel Enhancement Mode Power MOSFET
1 Description
These silicon N-channel Enhanced VDMOSFETs are obtained by the self-aligned planar Technology which reduce the conduction loss,improve switching performance and enhance the avalanche energy.The package form is TO-220F. Which accords with the RoHS standard.
2 Features
● Fast Switching
● Low On Resistance(Rdson≤0.5Ω)
● Low Gate Charge(Typ: 65nC)
● Low Reverse Transfer Capacitances(Typ: 20pF)
● 100% Single Pulse Avalanche Energy Test
● 100% ΔVDS Test
3 Application
● Used in various power switching circuit for system miniaturization and higher efficiency.
● Power switch circuit of adaptor and charger
| VDSS | RDS(on)（TYP) | ID |
| 650V | 0.37Ω | 20A |
