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| Quantity: | |
|---|---|
DHS026N06/DHS026N06F/DHS026N06E
WXDH
180A 85V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel enhancement mode power mosfets used advanced Splite gate technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
2 Features
● Fast switching
● Low on resistance
● Low gate charge
● High avalanche current
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Power switching applications
● Inverter management system
● Power tools
● Automotive electronics
| VDSS | RDS(on)(TYP) | ID |
| 68V | 2.6mΩ | 180A |
180A 85V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel enhancement mode power mosfets used advanced Splite gate technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
2 Features
● Fast switching
● Low on resistance
● Low gate charge
● High avalanche current
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Power switching applications
● Inverter management system
● Power tools
● Automotive electronics
| VDSS | RDS(on)(TYP) | ID |
| 68V | 2.6mΩ | 180A |
