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180A 68V N-channel Enhancement Mode Power MOSFET

These N-channel enhancement mode power mosfets used advanced Splite gate technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
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  • DHS026N06/DHS026N06F/DHS026N06E

  • WXDH

180A 85V N-channel Enhancement Mode Power MOSFET


1 Description

These N-channel enhancement mode power mosfets used advanced Splite gate technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. 


2 Features 

● Fast switching

● Low on resistance 

● Low gate charge 

● High avalanche current

● Low reverse transfer capacitances

● 100% single pulse avalanche energy test

● 100% ΔVDS test 


3 Applications

● Power switching applications

● Inverter management system

● Power tools 

● Automotive electronics

VDSS RDS(on)(TYP) ID
68V 2.6mΩ 180A


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